Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Author： Chichibu S F   Kagaya M   Corfdir P   Ganière J-D   Deveaud-Plédran B   Grandjean N   Kubo S   Fujito K  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.27, Iss.2, 2012-02, pp. : 24008-24014

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