Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Author： Lachab M   Sultana M   Fatima H   Adivarahan V   Fareed Q   Khan M A  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.2, 2013-02, pp. : 29501-29501

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