GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia

Author： Callahan M.   Wang B.-G.   Rakes K.   Bliss D.   Bouthillette L.   Suscavage M.   Wang S.-Q.  

Publisher： Springer Publishing Company

ISSN： 0022-2461

Source： Journal of Materials Science, Vol.41, Iss.5, 2006-03, pp. : 1399-1407

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Growth of GaN Film on Graphene by HVPE

By  

Advanced Materials Research, Vol. 2014, Iss. 1061, 2015-01 ,pp. : 175-179

Trans Tech Publications

Access to resources Recommend Favorite

GaN single crystal growth from a Na-Ga melt

By Yamane H.   Kinno D.   Shimada M.   Sekiguchi T.   Disalvo F.J.  

Journal of Materials Science, Vol. 35, Iss. 4, 2000-02 ,pp. : 801-808

Springer Publishing Company

Access to resources Recommend Favorite

Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

By Kim N. H.   Kang T. W.   Kim T. W.  

Journal of Materials Science, Vol. 39, Iss. 20, 2004-10 ,pp. : 6343-6345

Springer Publishing Company

Access to resources Recommend Favorite

Characterization of GaN 1-x P x alloys grown by metal-organic chemical vapor deposition

By Chen D.J.   Shen B.   Bi Z.X.   Zhang K.X.   Gu S.L.   Zhang R.   Shi Y.   Zheng Y.D.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 127-132

Elsevier

Access to resources Recommend Favorite

Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

By Park S. H.   Kang T. W.   Kim T. W.  

Journal of Materials Science, Vol. 39, Iss. 9, 2004-05 ,pp. : 3217-3219

Springer Publishing Company

Access to resources Recommend Favorite