Subbands transport of the two-dimensional electron gas in Al x Ga 1-x N/GaN heterostructures

By Zheng Z.W.   Shen B.   Jiang C.P.   Gui Y.S.   Someya T.   Tang N.   Zhang R.   Shi Y.   Zheng Y.D.   Guo S.L.   Chu J.H.   Arakawa Y.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 139-141

Elsevier

Access to resources Recommend Favorite

Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications

By Maeda N.   Tsubaki K.   Saitoh T.   Tawara T.   Kobayashi N.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 211-217

Elsevier

Access to resources Recommend Favorite

Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review

By O'Leary Stephen   Foutz Brian   Shur Michael   Eastman Lester  

Journal of Materials Science: Materials in Electronics, Vol. 17, Iss. 2, 2006-02 ,pp. : 87-126

Springer Publishing Company

Access to resources Recommend Favorite

Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

By Chu R.M.   Zheng Y.D.   Zhou Y.G.   Gu S.L.   Shen B.   Zhang R.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 207-210

Elsevier

Access to resources Recommend Favorite

Effect of surface treatments on Schottky contact on n-Al x Ga 1-x N/GaN heterostructures

By Liu J.   Shen B.   Zhou Y.G.   Zhou H.M.   Wang M.J.   Zheng Z.W.   Zhang R.   Shi Y.   Zheng Y.D.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 133-137

Elsevier

Access to resources Recommend Favorite