Concentration Asymmetry of Vacancies in Intrinsic Semiconductors with AB-Structure

Author: Kholopov E.V.  

Publisher: Springer Publishing Company

ISSN: 0022-4766

Source: Journal of Structural Chemistry, Vol.43, Iss.4, 2002-07, pp. : 552-555

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Abstract

Based on the theorem proved earlier for absolute Coulomb potentials in perfect crystals, it is shown that electron delocalization in ions results in a negative potential shift. As a result, the concentration prevalence of negative ion vacancies is predicted as a common thermodynamic property of AB type structures. Being compensatory with respect to anion potentials, this effect is responsible for n-type conductivity in intrinsic gallium arsenide and related systems and for a tendency toward superionic instability.