Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/f Noise Measurements

Author: Belyakov A.   Moryashin A.   Perov M.   Yakimov A.   Vandamme L.  

Publisher: Springer Publishing Company

ISSN: 0033-8443

Source: Radiophysics and Quantum Electronics, Vol.48, Iss.3, 2005-03, pp. : 240-245

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Abstract