Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Author： Wahl U.   Correia J.   Rita E.   Alves E.   Soares J.   Vries B.   Matias V.   Vantomme A.  

Publisher： Springer Publishing Company

ISSN： 0304-3843

Source： Hyperfine Interactions, Vol.159, Iss.1-4, 2004-12, pp. : 363-372

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies

By Baranov P.   Il’in I.   Mokhov E.   Khramtsov V.  

Physics of the Solid State, Vol. 41, Iss. 5, 1999-05 ,pp. : 783-785

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Magnetism in wide band gap semiconductors implanted with non-magnetic ions

By  

Journal of Physics: Conference Series , Vol. 153, Iss. 1, 2009-03 ,pp. : 357-362

IOP Publishing

Access to resources Recommend Favorite

Search for ferromagnetic ordering in Pd doped wide band gap semiconductors GaN and ZnO

By Kessler P.   Müller K.   Geruschke T.   Timmers H.   Byrne A.   Vianden R.  

Hyperfine Interactions, Vol. 197, Iss. 1-3, 2010-04 ,pp. : 155-158

Springer Publishing Company

Access to resources Recommend Favorite

SPECTROSCOPIE DE DÉFAUTS — LUMINESCENCE ITHE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS BY OPTICAL SPECTROSCOPY

By  

Le Journal de Physique Colloques, Vol. 35, Iss. C3, 1974-04 ,pp. : C3-127-C3-143

Edp Sciences

Access to resources Recommend Favorite

Relaxation of highly excited carriers in wide-gap semiconductors

By  

Journal of Physics: Condensed Matter, Vol. 27, Iss. 2, 2015-01 ,pp. : 25801-25808

IOP Publishing

Access to resources Recommend Favorite