An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

Author： Kessler P.   Lorenz K.   Miranda S.   Correia J.   Johnston K.   Vianden R.  

Publisher： Springer Publishing Company

ISSN： 0304-3843

Source： Hyperfine Interactions, Vol.197, Iss.1-3, 2010-04, pp. : 187-191

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