Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

By Jian-Yong Xiong   Yi-Qin Xu   Fang Zhao   Jing-Jing Song   Bin-Bin Ding   Shu-Wen Zheng   Tao Zhang   Guang-Han Fan  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 108505-108509

IOP Publishing

Access to resources Recommend Favorite

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

By Xiang-Jing Zhuo   Jun Zhang   Dan-Wei Li   Han-Xiang Yi   Zhi-Wei Ren   Jin-Hui Tong   Xing-Fu Wang   Xin Chen   Bi-Jun Zhao   Wei-Li Wang   Shu-Ti Li  

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 68502-68506

IOP Publishing

Access to resources Recommend Favorite

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

By Xiao-Peng Yu   Guang-Han Fan   Bin-Bin Ding   Jian-Yong Xiong   Yao Xiao   Tao Zhang   Shu-Wen Zheng  

Chinese Physics B, Vol. 23, Iss. 2, 2014-02 ,pp. : 28502-28505

IOP Publishing

Access to resources Recommend Favorite

Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer

By  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 4, 2015-02 ,pp. : 45101-45107

IOP Publishing

Access to resources Recommend Favorite

InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers

By Jin-Hui Tong   Bi-Jun Zhao   Zhi-Wei Ren   Xing-Fu Wang   Xin Chen   Shu-Ti Li  

Chinese Physics Letters, Vol. 30, Iss. 5, 2013-05 ,pp. : 58503-58505

IOP Publishing

Access to resources Recommend Favorite