Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers

By Sarzała R.P.   Mendla P.   Wasiak M.   Maćkowiak P.   Bugajski M.   Nakwaski W.  

Optical and Quantum Electronics, Vol. 36, Iss. 4, 2004-03 ,pp. : 331-347

Springer Publishing Company

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High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures

By Livshits D.   Kovsh A.   Zhukov A.   Maleev N.   Mikhrin S.   Vasil’ev A.   Nikitina E.   Ustinov V.   Ledentsov N.   Lin G.   Chi J.  

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 9-11

MAIK Nauka/Interperiodica

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Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

By Sarzała Robert   Nakwaski Włodzimierz  

Optical and Quantum Electronics, Vol. 38, Iss. 4-6, 2006-03 ,pp. : 293-311

Springer Publishing Company

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1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots

By Zhukov A.   Volovik B.   Mikhrin S.   Maleev N.   Tsatsul’nikov A.   Nikitina E.   Kayander I.   Ustinov V.   Ledentsov N.  

Technical Physics Letters, Vol. 27, Iss. 9, 2001-09 ,pp. : 734-736

MAIK Nauka/Interperiodica

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Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

By Sarzała Robert   Nakwaski Włodzimierz  

Optical and Quantum Electronics, Vol. 38, Iss. 4-6, 2006-03 ,pp. : 325-337

Springer Publishing Company

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