Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO₃-buffered silicon substrates by sol-gel processing

Author： Zhai Jiwei Shen Bo Yao Xi Xu Zhengkui Li Xin Chen Haydn

Publisher： Springer Publishing Company

ISSN： 0928-0707

Source： Journal of Sol-Gel Science and Technology, Vol.42, Iss.3, 2007-06, pp. : 369-373

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Abstract

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O₃ (PLZST) and Pb(Nb,Zr,Sn,Ti)O₃ (PNZST) thin films have been fabricated on LaNiO₃/Pt/Ti/SiO₂/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field.