Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La_0.7Sr_0.3MnO₃/SiO₂/Si substrate

Author： Wang Zhan Usuki Hirokazu Kumagai Toshihide Kokawa Hiroyuki

Publisher： Springer Publishing Company

ISSN： 0928-0707

Source： Journal of Sol-Gel Science and Technology, Vol.42, Iss.3, 2007-06, pp. : 375-379

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Abstract

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.