Effects of gate sidewall recess on Al0.2Ga0.8As/ In0.15Ga0.85As PHEMTs by citric-based selective etchant

Author: Yarn K.   Liao C.   Wang Y.   Houng M.  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.16, Iss.8, 2005-08, pp. : 529-532

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Abstract