Fabrication and comparative study of top-gate and bottom-gate ZnO–TFTs with various insulator layers

Author: Zhang XinAn   Zhang JingWen   Zhang WeiFeng   Hou Xun  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.21, Iss.7, 2010-07, pp. : 671-675

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Abstract