Temperature-dependent electrical properties of plasma-grown gate oxides on tensile-strained Si0.993 C0.007 layers

Author: Mahapatra R.   Kar G.S.   Ray S.K.   Maikap S.  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.15, Iss.1, 2004-01, pp. : 43-46

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Abstract