Author: Wang Hua Li Jian Xu Jiwen Yang Ling Ren Minfang
Publisher: Springer Publishing Company
ISSN: 0957-4522
Source: Journal of Materials Science: Materials in Electronics, Vol.22, Iss.6, 2011-06, pp. : 654-658
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Abstract
1–1 intergrowth-superlattice-structured Bi3TiNbO9–Bi4Ti3O12 (BTN–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor films are crystallized in the desired intergrown BTN–BIT superlattice structures by optimizing the processing conditions. Synthesized BTN–BIT thin films annealed below 750 °C are polycrystalline, uniform and crack-free, no pyrochlore phase or other second phase, and exhibited good ferroelectric properties. As the annealing temperature increases from 600 to 700 °C, both remanent polarization
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