Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric

Author: Voitsekhovskii A.   Nesmelov S.   Dzyadukh S.   Varavin V.   Dvoretskii S.   Mikhailov N.   Sidorov Yu.   Vasil’ev V.   Yakushev M.  

Publisher: Springer Publishing Company

ISSN: 1064-8887

Source: Russian Physics Journal, Vol.53, Iss.2, 2010-07, pp. : 148-154

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