Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Kathawala Gulzar A.   Mohamed Mohamed   Ravaioli Umberto  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 85-89

Springer Publishing Company

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Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Tsuchiya Hideaki   Horino Motoki   Miyoshi Tanroku  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 91-95

Springer Publishing Company

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Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Bufler F.M.   Schenk A.   Fichtner W.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 81-84

Springer Publishing Company

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“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Fiori G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 123-126

Springer Publishing Company

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Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Curatola G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 309-312

Springer Publishing Company

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