Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs

By Kumar Mirgender  

Journal of Computational Electronics, Vol. 12, Iss. 2, 2013-06 ,pp. : 275-280

Springer Publishing Company

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Compact modeling and simulation of nanoscale fully depleted DG-SOI MOSFETS

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Journal of Computational Electronics, Vol. 10, Iss. 1-2, 2011-06 ,pp. : 201-209

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Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)

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Journal of Computational Electronics, Vol. 10, Iss. 1-2, 2011-06 ,pp. : 154-162

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Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

By Li Yiming  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 371-376

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The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices

By Raleva K.   Vasileska D.  

Journal of Computational Electronics, Vol. 12, Iss. 4, 2013-12 ,pp. : 601-610

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