Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Author： Stolichnov Igor Gysel Roman Tagantsev Alexander Riester Sebastian Setter Nava Salvatore Giovanni Bouvet Didier Ionescu Adrian

Publisher： Taylor & Francis Ltd

ISSN： 0015-0193

Source： Ferroelectrics, Vol.409, Iss.1, 2010-01, pp. : 185-189

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