Simulation of energy and fluence dependence of heavy ion induced displacement damage factor in bipolar junction transistor

Author： Kulkarni S. R. Ravindra M. Joshi G. R. Damle R.

Publisher： Taylor & Francis Ltd

ISSN： 1042-0150

Source： Radiation Effects and Defects in Solids, Vol.159, Iss.5, 2004-05, pp. : 273-280

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

By Madhu K. V. Kulkarni S. R. Ravindra M. Damle R.

Radiation Effects and Defects in Solids, Vol. 163, Iss. 11, 2008-11 ,pp. : 873-883

Taylor & Francis Ltd

Access to resources Recommend Favorite

The temperature dependence of heavy-ion damage in iron: A microstructural transition at elevated temperatures

By Yao Z.

Philosophical Magazine, Vol. 90, Iss. 35-36, 2010-12 ,pp. : 4623-4634

Taylor & Francis Ltd

Access to resources Recommend Favorite

HEAVY ION INDUCED DAMAGE IN MgF2 CRYSTALS

By EL-SAID A. S. NEUMANN R. SCHWARTZ K. TRAUTMANN C.

Radiation Effects and Defects in Solids, Vol. 157, Iss. 6-12, 2002-01 ,pp. : 649-654

Taylor & Francis Ltd

Access to resources Recommend Favorite

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 753-756

Trans Tech Publications

Access to resources Recommend Favorite

Anisotropic energy distribution of sputtered atoms induced by low energy heavy ion bombardment

By Zhang Lai Zhang Zhu

Radiation Effects and Defects in Solids, Vol. 160, Iss. 8, 2005-08 ,pp. : 337-347

Taylor & Francis Ltd

Access to resources Recommend Favorite