Author： Hunt Mitchell Sayyah Rana Macleod Todd C. Ho Fat D.
Publisher： Taylor & Francis Ltd
ISSN： 1058-4587
Source： Integrated Ferroelectrics, Vol.141, Iss.1, 2013-01, pp. : 134-144
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Abstract
Data is presented in this paper that was obtained using a metal-ferroelectric-semiconductor field effect transistor (MFSFET) in a common-drain amplifier configuration. The empirical data shown has been collected using larger drain voltages than previously seen, which helps to further understand and characterize the interesting operation of this amplifier circuit. The effects of varying different parameters such as load resistance, poling voltage, and input voltages of the amplifier circuit are examined. Differences between the MFSFET and MOSFET common-drain amplifier configurations are explored in-depth.
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