Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr_0.1Ti_0.9)O₃ Film–Insulator-Silicon Structure

By Chen Kai-Huang   Cheng Chien-Min   Lin Chun-Cheng   Tsai Jen-Hwan  

Integrated Ferroelectrics, Vol. 143, Iss. 1, 2013-01 ,pp. : 40-46

Taylor & Francis Ltd

Access to resources Recommend Favorite

THE EFFECT OF REDUCED GATE LEAKAGE ON IMPROVED RETENTION TIME OF METAL-FERROELECTRIC (PbZr0.53Ti0.47O3)-INSULATOR (ZrO2)-SEMICONDUCTOR CAPACITORS

By Shih Wen-chieh   Lee Joseph Ya-min  

Integrated Ferroelectrics, Vol. 98, Iss. 1, 2008-01 ,pp. : 113-120

Taylor & Francis Ltd

Access to resources Recommend Favorite

ELECTRICAL PROPERTIES OF METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR CAPACITORS USING Pt/(Bi3.15Nd0.85)(Ti3-xVx)O12/ Y2O3/Si STRUCTURE

By Tang Minghua   Zhou Yichun   Zheng Xuejun   Ye Zhi   Cheng Chuanpin   Hu Zenshun   He J.  

Integrated Ferroelectrics, Vol. 94, Iss. 1, 2007-10 ,pp. : 105-114

Taylor & Francis Ltd

Access to resources Recommend Favorite

Pb(Zr,Ti)O 3 Thin Film Deposited Using AlN Buffer Layer and Its Ferroelectric Properties

By LIN YUNG-CHEN   CHOU CHENG-HSIEN   TAI NYAN-HWA   HUANG JIN-HUA   LIN I-NAN  

Integrated Ferroelectrics, Vol. 64, Iss. 1, 2004-01 ,pp. : 237-246

Taylor & Francis Ltd

Access to resources Recommend Favorite

Ferroelectric Bi Modified YMnO3 Thin Films Grown on Si (001) Using Y2O3 Buffer Layer for Metal-Ferroelectric-Insulator-Semiconductor Structure

By Choi Taekjib   Shin Sanghun   Kim Young Sung   Lee Jaichan  

Integrated Ferroelectrics, Vol. 45, Iss. 1, 2002-01 ,pp. : 23-29

Taylor & Francis Ltd

Access to resources Recommend Favorite