Characteristics of Ferroelectric Gate Transistor Using Nd 2 Ti 2 O 7 /HfO 2 /Si Structures

Author： KIM WOO   LEE CHANG   YANG JUN-KYU   PARK HYUNG-HO  

Publisher： Taylor & Francis Ltd

ISSN： 1058-4587

Source： Integrated Ferroelectrics, Vol.64, Iss.1, 2004-01, pp. : 269-276

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