CONSTRAINTS AND RESOLUTION FOR PHASE CHANGE MATERIALS AND MEMORY DEVICE SCALING

Author： YANG HONG   YINYIN LIN   YUN LING   LIANZHANG LAI   JIE FENG   YUNFENG LAI   BAOWEI QIAO   TINGAO TANG   BINGCHU CAI   BOMY CHEN  

Publisher： Taylor & Francis Ltd

ISSN： 1058-4587

Source： Integrated Ferroelectrics, Vol.78, Iss.1, 2006-11, pp. : 153-163

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

By Kozyukhin S.  

Nanotechnologies in Russia, Vol. 6, Iss. 3-4, 2011-04 ,pp. : 227-236

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Si/SnSe2 Multilayer Films for Phase Change Memory Applications

By Sun Mingcheng   Hu Yifeng   Shen Bo   Zhai Jiwei   Song Sannian   Song Zhitang  

Integrated Ferroelectrics, Vol. 140, Iss. 1, 2012-01 ,pp. : 1-7

Taylor & Francis Ltd

Access to resources Recommend Favorite

INVESTIGATION ON ETCH CHARACTERISTICS OF GESBTE THIN FILMS FOR PHASE-CHANGE MEMORY

By PARK IK   LEE JANG   CHUNG CHEE  

Integrated Ferroelectrics, Vol. 80, Iss. 1, 2006-11 ,pp. : 207-218

Taylor & Francis Ltd

Access to resources Recommend Favorite

A contact resistance model for scanning probe phase-change memory

By Wang Lei   Wright David   Aziz Mustafa   Ying Jin    

Journal of Micromechanics and Microengineering, Vol. 24, Iss. 3, 2014-03 ,pp. : 37001-37006

IOP Publishing

Access to resources Recommend Favorite

Thermal, mechanical and microstructural analysis of concrete containing microencapsulated phase change materials

By Dehdezi Pejman Keikhaei  

International Journal of Pavement Engineering, Vol. 14, Iss. 5, 2013-07 ,pp. : 449-462

Taylor & Francis Ltd

Access to resources Recommend Favorite