LOW TEMPERATURE PREPARATION OF (Bi,Nd) 4 TI 3 O 12 THIN FILMS BY LIQUID-DELIVERY MOCVD USING NEODYMIUM PRECURSORS WITH HIGH DEPOSITION EFFICIENCY

By TASAKI Y.   SEKITA Y.   TANAKA T.   YODA K.   NITTAMACHI T.   YOSHIZAWA S.  

Integrated Ferroelectrics, Vol. 81, Iss. 1, 2006-11 ,pp. : 271-279

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FABRICATION OF FERROELECTRIC PZT THIN FILMS BY LIQUID DELIVERY MOCVD USING NOVEL Zr and Ti PRECURSORS

By YEH C.P.   LISKER M.   VEZIN V.   SEITZINGER B.   BAUMANN P.K.   GARKE B.   BLASING J.   KROST A.   BURTE E.P.  

Integrated Ferroelectrics, Vol. 104, Iss. 1, 2008-01 ,pp. : 16-24

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Low Voltage Operation of Ferroelectric Capacitors using Sr-Deficient and Praseodymium-Substituted Strontium Bismuth Tantalate Ultra Thin Films

By AIZAWA KOJI   ISHIWARA HIROSHI  

Integrated Ferroelectrics, Vol. 62, Iss. 1, 2004-01 ,pp. : 211-214

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Preparation of SrBi2Ta2O9 Thin Films by Liquid-Delivery MOCVD Without Additional Solvents

By Nukaga Norimasa   Ono Hirofumi   Shida Takuya   Machida Hideaki   Suzuki Toshie   Funakubo Hiroshi  

Integrated Ferroelectrics, Vol. 45, Iss. 1, 2002-01 ,pp. : 215-222

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LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O 3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP) 2 , Zr(MMP) 4 AND Ti(MMP) 4

By OTANI YOHEI   UCHIYAMA KIYOSHI   OKAMURA SOICHIRO   SHIOSAKI TADASHI  

Integrated Ferroelectrics, Vol. 81, Iss. 1, 2006-11 ,pp. : 261-270

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