AN HSPICE MACROMODEL FOR RESISTIVE RANDOM ACCESS MEMORY CELL BASED ON CuxO SYSTEM

By Ding Yiqing   Liu Xin   Lin Yinyin   Tang Ting-ao   Chen Bomy  

Integrated Ferroelectrics, Vol. 96, Iss. 1, 2008-01 ,pp. : 140-145

Taylor & Francis Ltd

Access to resources Recommend Favorite

On a Novel Ferro Resistive Random Access Memory (FRRAM): Basic Model and First Experiments

By MEYER R.   CONTRERAS J.   PETRARU A.   KOHLSTEDT H.  

Integrated Ferroelectrics, Vol. 64, Iss. 1, 2004-01 ,pp. : 77-88

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation on Resistive Memory Switching Mechanism of NiO

By Kim D. C.   Seo S.   Suh D. -S.   Jung R.   Lee C. W.   Shin J. K.   Yoo I. K.   Baek I. G.   Kim H. J.   Yim E. K.   Lee C. W.   Park S. O.   Kim H. S.   Chung U-In   Moon J. T.   Ryu B. I.   Kim J. -S.   Park B. H.  

Integrated Ferroelectrics, Vol. 93, Iss. 1, 2007-09 ,pp. : 90-97

Taylor & Francis Ltd

Access to resources Recommend Favorite

Nanographene charge trapping memory with a large memory window

By  

Nanotechnology, Vol. 26, Iss. 45, 2015-11 ,pp. : 455704-455708

IOP Publishing

Access to resources Recommend Favorite

Stability of Space Charge Compensated Ferroelectrics

By SUCHANECK G.   DEYNEKA A.   JASTRABIK L.   GERLACH G.  

Integrated Ferroelectrics, Vol. 62, Iss. 1, 2004-01 ,pp. : 55-60

Taylor & Francis Ltd

Access to resources Recommend Favorite