Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

Author： Shin J. M. Song Y. J. Kang D. W. Jeong C. W. Ryoo K. C. Park J. H. Oh J. H. Kong J. H. Park Jae Fai Y. Oh Y. T. Kim J. I. Lim D. W. Park S. S. Kim J. H. Kim J. S. Kim Y. T. Koh G. H. Jeong G. T. Jeong H. S. Kim Kinam

Publisher： Taylor & Francis Ltd

ISSN： 1058-4587

Source： Integrated Ferroelectrics, Vol.90, Iss.1, 2007-04, pp. : 88-94

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Advanced Integration Process Technology for Highly Reliable Ferroelectric Devices

By SONG Y. KANG H. JOO H. JANG N. KIM H. PARK J. KANG S. LEE S. KIM KINAM

Integrated Ferroelectrics, Vol. 61, Iss. 1, 2004-01 ,pp. : 97-103

Taylor & Francis Ltd

Access to resources Recommend Favorite

A contact resistance model for scanning probe phase-change memory

By Wang Lei Wright David Aziz Mustafa Ying Jin

Journal of Micromechanics and Microengineering, Vol. 24, Iss. 3, 2014-03 ,pp. : 37001-37006

IOP Publishing

Access to resources Recommend Favorite

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

By Kozyukhin S.

Nanotechnologies in Russia, Vol. 6, Iss. 3-4, 2011-04 ,pp. : 227-236

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Si/SnSe₂ Multilayer Films for Phase Change Memory Applications

By Sun Mingcheng Hu Yifeng Shen Bo Zhai Jiwei Song Sannian Song Zhitang

Integrated Ferroelectrics, Vol. 140, Iss. 1, 2012-01 ,pp. : 1-7

Taylor & Francis Ltd

Access to resources Recommend Favorite

INVESTIGATION ON ETCH CHARACTERISTICS OF GESBTE THIN FILMS FOR PHASE-CHANGE MEMORY

By PARK IK LEE JANG CHUNG CHEE

Integrated Ferroelectrics, Vol. 80, Iss. 1, 2006-11 ,pp. : 207-218

Taylor & Francis Ltd

Access to resources Recommend Favorite