A CELL MODEL FOR NON-VOLATILE RANDOM ACCESS MEMORY AND A SUBSEQUENT METHOD FOR INCREASING DENSITY

Author： Jeong Hyeok-Je   Noh Keum-Hwan   Lee Seaung-Suk   Hong Suk-Kyoung   Kang Jong-Ho   Park Kun-Woo  

Publisher： Taylor & Francis Ltd

ISSN： 1058-4587

Source： Integrated Ferroelectrics, Vol.91, Iss.1, 2007-06, pp. : 1-9

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A DUAL-GATE CELL (DGC) FeRAM WITH NDRO AND RANDOM ACCESS SCHEME FOR NANOSCALE AND TERABIT NON-VOLATILE MEMORY

By KANG HEE-BOK   LEE JAE-JIN   HONG SUK-KYOUNG   AHN JIN-HONG   KIH JOONG-SIK   SUNG MAN   SUNG YOUNG-KWON  

Integrated Ferroelectrics, Vol. 81, Iss. 1, 2006-11 ,pp. : 141-148

Taylor & Francis Ltd

Access to resources Recommend Favorite

SESSION B: ALTERNATIVE NON-VOLATILE MEMORY TECHNOLOGIES

By  

Integrated Ferroelectrics, Vol. 93, Iss. 1, 2007-09 ,pp. : 73-73

Taylor & Francis Ltd

Access to resources Recommend Favorite

Retention Analysis of a Non-Volatile Ferroelectric Memory Device

By John Caroline S.   Macleod Todd C.   Evans Joe   HO Fat D.  

Integrated Ferroelectrics, Vol. 140, Iss. 1, 2012-01 ,pp. : 23-34

Taylor & Francis Ltd

Access to resources Recommend Favorite

Anchor-free NEMS non-volatile memory cell for harsh environment data storage

By Singh Pushpapraj   Kim Tony Tae-Hyoung          

Journal of Micromechanics and Microengineering, Vol. 24, Iss. 11, 2014-11 ,pp. : 115007-115013

IOP Publishing

Access to resources Recommend Favorite

Electronic properties of functional nanocrystal layers for non-volatile memory applications

By Coli P.   Iannaccone G.  

Materials Science and Technology, Vol. 18, Iss. 7, 2002-07 ,pp. : 733-735

Maney Publishing

Access to resources Recommend Favorite