Body engineering structure for ZnO thin-film transistors: a Schottky-contact-merged ZnO TFT

Author： Kim Young Su   Kang Min Ho   Oh Jae Sub   Jeong Kang Suk   Kim Yu Mi   Yoo Dong Eun   Lee Hi Deok   Lee Ga Won  

Publisher： Taylor & Francis Ltd

ISSN： 1598-0316

Source： Journal of Information Display, Vol.14, Iss.3, 2013-09, pp. : 89-91

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effects of the Al2O3 interlayer in ZnO thin-film transistors fabricated via atomic layer deposition

By Kim Seong-Hyeon   Jeong Kwang-Seok   Lee Ga-Won   Lee Hi-Deok  

Journal of Information Display, Vol. 14, Iss. 2, 2013-06 ,pp. : 61-65

Taylor & Francis Ltd

Access to resources Recommend Favorite

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

By  

Semiconductor Science and Technology, Vol. 30, Iss. 2, 2015-02 ,pp. : 24011-24017

IOP Publishing

Access to resources Recommend Favorite

Influence of a highly doped buried layer for HfInZnO thin-film transistors

By Chong Eugene    

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 12001-12004

IOP Publishing

Access to resources Recommend Favorite

High operating voltage application of transparent a-InGaZnO thin-film transistors

By Jeong Jaewook     Kim Joonwoo   Kim Jung-Hye   Choi Byeongdae  

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25015-25019

IOP Publishing

Access to resources Recommend Favorite

A study of the design of ZnO thin film pressure sensors

By Chang C. C.   Fang S. K.  

International Journal of Electronics, Vol. 87, Iss. 8, 2000-08 ,pp. : 1013-1023

Taylor & Francis Ltd

Access to resources Recommend Favorite