Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Author： Marko I P Ludewig P Bushell Z L Jin S R Hild K Batool Z Reinhard S Nattermann L Stolz W Volz K Sweeney S J

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.47, Iss.34, 2014-08, pp. : 345103-345110

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In_0.1Ga_0.9As/AlGaAs/GaAs heterostructures

By Aleksandrov S. Alekseev A. Demidov D. Dudin A. Katsavets N. Kogan I. Pogorel’skii Yu. Ter-Martirosyan A. Sokolov É. Chaly V. Shkurko A.

Technical Physics Letters, Vol. 28, Iss. 8, 2002-08 ,pp. : 696-698

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Luminescent Properties of Sr₄Si₃O₈Cl₄:Eu²⁺, Bi³⁺ Phosphors for Near UV InGaN-Based Light-Emitting-Diodes

By Shen Wangqing Zhu Yiwen Wang Zhengling

Applied Sciences, Vol. 5, Iss. 4, 2015-12 ,pp. : 1494-1502

MDPI

Access to resources Recommend Favorite

AlGaN-based laser diodes for the short-wavelength ultraviolet region

New Journal of Physics, Vol. 11, Iss. 12, 2009-12 ,pp. : 627-640

IOP Publishing

Access to resources Recommend Favorite

Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

By Xi-Ren Chen Yu-Xin Song Liang-Qing Zhu Zhen Qi Liang Zhu Fang-Xing Zha Shao-Ling Guo Shu-Min Wang Jun Shao

Chinese Physics Letters, Vol. 32, Iss. 6, 2015-06 ,pp. : 67301-67304

IOP Publishing

Access to resources Recommend Favorite