An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

Author： Ying Liu   Jin He   Mansun Chan   Cai-Xia Du   Yun Ye   Wei Zhao   Wen Wu   Wan-Ling Deng   Wen-Ping Wang  

Publisher： IOP Publishing

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.9, 2014-09, pp. : 97102-97107

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Electron tomography of gate-all-around nanowire transistors

By  

Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 254-257

IOP Publishing

Access to resources Recommend Favorite

DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-51-C6-56

Edp Sciences

Access to resources Recommend Favorite

Gate modulation of below-band-gap photoconductivity in ZnO nanowire field-effect-transistors

By Cammi Davide   Röder Robert   Ronning Carsten  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 39, 2014-10 ,pp. : 394014-394019

IOP Publishing

Access to resources Recommend Favorite

Memory Effect in Ferroelectric-Gate Field Effect Transistors Using 0.1μm-Thick Silicon-on-Insulator Substrates

By Aizawa Koji   Ishiwara Hiroshi  

Ferroelectrics, Vol. 271, Iss. 1, 2002-01 ,pp. : 173-178

Taylor & Francis Ltd

Access to resources Recommend Favorite

Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

By Qing-Qing Wu   Jing Chen   Jie-Xin Luo   Kai Lü   Tao Yu   Zhan Chai   Xi Wang  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 108501-108504

IOP Publishing

Access to resources Recommend Favorite