Memory Effect in Ferroelectric-Gate Field Effect Transistors Using 0.1μm-Thick Silicon-on-Insulator Substrates

Author: Aizawa Koji   Ishiwara Hiroshi  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.271, Iss.1, 2002-01, pp. : 173-178

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