Related content

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

By Thomas T   Mellor A   Hylton N P   Fuhrer M   Alonso-Álvarez D   Braun A   Ekins-Daukes N J   David J P R   Sweeney S J  

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94010-94015

IOP Publishing

Access to resources Recommend Favorite

Determination of ordering induced birefringence in (Al)GaInP

By Wirth R.   Geng C.   Scholz F.   Hangleiter A.  

Journal of Electronic Materials, Vol. 27, Iss. 3, 1998-03 ,pp. : 122-126

Springer Publishing Company

Access to resources Recommend Favorite

Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs

By Chen L.   Fan G.   Meng Y.  

Microelectronics, Vol. 35, Iss. 2, 2004-02 ,pp. : 125-130

Elsevier

Access to resources Recommend Favorite

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

By Cappelletti M A   Cédola A P   Blancá E L Peltzer y  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115025-115030

IOP Publishing

Access to resources Recommend Favorite

Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell

By Min Cui   Nuofu Chen   Xiaoli Yang   Han Zhang  

Journal of Semiconductors, Vol. 33, Iss. 2, 2012-02 ,pp. : 24006-24009

IOP Publishing

Access to resources Recommend Favorite