A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing

Author： Wang X D Xiong Y Tang M H Peng L Xiao Y G Xu X Y Liang S E Zhong X H He J H

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.9, 2014-09, pp. : 95016-95020

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor

Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. : 114001-114008

IOP Publishing

Access to resources Recommend Favorite

A 2-D semi-analytical model of double-gate tunnel field-effect transistor

By Huifang Xu Yuehua Dai Ning Li Jianbin Xu

Journal of Semiconductors, Vol. 36, Iss. 5, 2015-05 ,pp. : 54002-54008

IOP Publishing

Access to resources Recommend Favorite

Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

By Rawat Gopal Kumar Sanjay Goel Ekta Kumar Mirgender Dubey Sarvesh Jit S.

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 84001-84008

IOP Publishing

Access to resources Recommend Favorite

Model of the diode-connected GaAs Schottky-gate field-effect transistor

By Starosel’skii V. Burzin S. Shmelev S. Guminov N.

Russian Microelectronics, Vol. 36, Iss. 4, 2007-07 ,pp. : 209-220

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24003-24008

IOP Publishing

Access to resources Recommend Favorite