Semiconductor Science and Technology,volume 29,issue 9  (09-2014)

Period of time： 2014年9期

Publisher： IOP Publishing

Founded in： 1986

Total resources： 42

ISSN： 0268-1242

Subject： TN Radio Electronics, Telecommunications Technology

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Semiconductor Science and Technology,volume 29,issue 9

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Effect of heavy noble gas ion irradiation on terahertz emission efficiency of InP (100) and (111) crystal planes

By Radhanpura K,Lewis R A,Sirbu L,Enachi M,Tiginyanu I M,Skuratov V A in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95015-95019

IOP Publishing

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UV-assisted rapid thermal annealing for solution-processed zinc oxide thin-film transistors

By Hwang Jaeeun,Park Jaehoon,Kim Hongdoo in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95019-95024

IOP Publishing

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Heat dissipation property of cover glasses with heat sink films for transparent organic light-emitting diodes

By Park J W,Lee J H in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95023-95028

IOP Publishing

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A simplified thermal model for lateral MOSFET and its application to temperature monitoring

By Carvajal M A,Martínez-García M S,Martínez-Olmos A,Banqueri J,Palma A J in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95017-95025

IOP Publishing

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Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis

By Scopece Daniele,Montalenti Francesco,Bollani Monica,Chrastina Daniel,Bonera Emiliano in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95012-95022

IOP Publishing

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Near-interfacial thermal donor generation during processing of (100)Si/low-κ Si-oxycarbide insulator structures revealed by electron spin resonance

By Stesmans A,Iacovo S,Nguyen S,Afanas’ev V V,Baklanov M R,Urbanowicz A M in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95008-95016

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Element substitution from substrates in Bi2Se3, Bi2Te3 and Sb2Te3 overlayers deposited by hot wall epitaxy

By Takagaki Y,Jahn U,Jenichen B,Berlin K,Kong X,Biermann K in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95021-95033

IOP Publishing

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Stress analysis of ultra-thin silicon chip-on-foil electronic assembly under bending

By Wacker Nicoleta,Richter Harald,Hoang Tu,Gazdzicki Pawel,Schulze Mathias,Angelopoulos Evangelos A,Hassan Mahadi-Ul,Burghartz Joachim N in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95007-95018

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Interface recombination feature in metal–semiconductor junction at high photo-excitation

By Konin A in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95009-95012

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Analysis of interface trap states in InAlN/AlN/GaN heterostructures

By Zhou Yang,Lin Zhaojun,Luan Chongbiao,Zhao Jingtao,Yang Qihao,Yang Ming,Wang Yutang,Feng Zhihong,Lv Yuanjie in (2014)

Semiconductor Science and Technology,volume 29,issue 9 , Vol. 29, Iss. 9, 2014-09 , pp. 95011-95015

IOP Publishing

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