Nano-optical analysis of GaN-based diode lasers

Author： Friede Sebastian Kuehn Sergei Tomm Jens W Hoffmann Veit Zeimer Ute Weyers Markus Kneissl Michael Elsaesser Thomas

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.11, 2014-11, pp. : 112001-112005

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Kinetics of catastrophic optical damage in GaN-based diode lasers

By HempelMartin TommJens W StojetzBernhard KönigHarald StraussUwe ElsaesserThomas

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 72001-72006

IOP Publishing

Access to resources Recommend Favorite

GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer

By Huamao Huang Jinyong Hu Hong Wang

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 84006-84010

IOP Publishing

Access to resources Recommend Favorite

Materials issues for InGaN-based lasers

By Nakamura Shuji

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 160-165

Springer Publishing Company

Access to resources Recommend Favorite

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

By Xu Hui

Journal of Electronic Materials, Vol. 39, Iss. 10, 2010-10 ,pp. : 2237-2242

Springer Publishing Company

Access to resources Recommend Favorite

GaN-based high-voltage light-emitting diodes with backside reflector

By Huamao Huang Hong Wang Xiaosheng Huang Jinyong Hu

Journal of Semiconductors, Vol. 35, Iss. 7, 2014-07 ,pp. : 74013-74017

IOP Publishing

Access to resources Recommend Favorite