Electrode-material dependent switching in TaO x memristors

Author： Zhang Lu   Yang J Joshua   Li Zhiyong   Williams R Stanley   Ge Ning   Zhang M-X  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.10, 2014-10, pp. : 104003-104010

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Modelling of nanostructured TiO2-based memristors

By Shinde S. S.   Dongle T. D.  

Journal of Semiconductors, Vol. 36, Iss. 3, 2015-03 ,pp. : 34001-34003

IOP Publishing

Access to resources Recommend Favorite

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta 2 O 5 stacks

By Atanassova E.   Stojadinović N.   Spassov D.   Manić I.   Paskaleva A.  

Semiconductor Science and Technology, Vol. 28, Iss. 5, 2013-05 ,pp. : 55006-55014

IOP Publishing

Access to resources Recommend Favorite

Electrical properties of Ca x Sr 1−x Bi 2 Ta 2 O 9 ferroelectric-gate field-effect transistors

By Zhang Wei   Takahashi Mitsue   Sakai Shigeki  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85003-85009

IOP Publishing

Access to resources Recommend Favorite

TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

By Gale Ella  

Semiconductor Science and Technology, Vol. 29, Iss. 10, 2014-10 ,pp. : 104004-104013

IOP Publishing

Access to resources Recommend Favorite

Static induction transistor using TaN thin film as gate electrode for high-performance application

By Zheng Z.   Chen Y.  

Electronic Materials Letters, Vol. 10, Iss. 2, 2014-03 ,pp. : 383-385

Springer Publishing Company

Access to resources Recommend Favorite