Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

By  

Journal of Physics: Conference Series , Vol. 180, Iss. 1, 2009-07 ,pp. : 583-598

IOP Publishing

Access to resources Recommend Favorite

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

By Esqueda Ivan S.   Cress Cory D.   Anderson Travis J.   Ahlbin Jonathan R.   Bajura Michael   Fritze Michael   Moon Jeong-S.  

Electronics, Vol. 2, Iss. 3, 2013-07 ,pp. : 234-245

MDPI

Access to resources Recommend Favorite

Modeling the effect of the transconductance increase in GaAs field-effect transistors

By Gergel’ V.   Mokerov V.   Zelenyi A.   Timofeev M.  

Doklady Physics, Vol. 47, Iss. 10, 2002-10 ,pp. : 715-716

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

By Phillips T.  

Ferroelectrics, Vol. 333, Iss. 1, 2006-01 ,pp. : 177-181

Taylor & Francis Ltd

Access to resources Recommend Favorite

3D NEGF quantum transport simulator for modeling ballistic transport in nano FinFETs

By  

Journal of Physics: Conference Series , Vol. 107, Iss. 1, 2008-03 ,pp. : 57-69

IOP Publishing

Access to resources Recommend Favorite