The influence of polarisation and image charges on electron- impurity scattering in high degeneracy, nanometre scale silicon wrap-round gate MOSFETs

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.109, Iss.1, 2008-03, pp. : 44-50

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain

By  

Journal of Physics: Conference Series , Vol. 109, Iss. 1, 2008-03 ,pp. : 117-122

IOP Publishing

Access to resources Recommend Favorite

Impurity scattering in electron-doped high-Tc cuprates

By Maki K.   Puchkaryov E.  

EPL (EUROPHYSICS LETTERS), Vol. 42, Iss. 2, 2010-03 ,pp. : 209-214

Edp Sciences

Access to resources Recommend Favorite

Influence of thermal scattering on the formation on electron image contrast

By  

Journal de Physique Lettres, Vol. 35, Iss. 10, 1974-10 ,pp. : 169-172

Edp Sciences

Access to resources Recommend Favorite

Non-equilibrium dielectric response of high-K gate stacks in Si MOSFETS: application to SO interface phonon scattering

By  

Journal of Physics: Conference Series , Vol. 35, Iss. 1, 2006-04 ,pp. : 255-268

IOP Publishing

Access to resources Recommend Favorite

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack

By Xue-Feng Zhang   Jing-Ping Xu   Pui-To Lai   Chun-Xia Li   Jian-Guo Guan  

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3820-3826

IOP Publishing

Access to resources Recommend Favorite