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Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers

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Band offsets and properties of AlGaAs/GaAs and AlGaN/GaN material systems

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Properties of GaN layers deposited on AlN/sapphire template substrates

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