Publisher： IOP Publishing
ISSN： 1742-6596
Source： Journal of Physics: Conference Series , Vol.200, Iss.7, 2010-01, pp. : 33-36
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW DISCHARGE Si:H FILMS
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
Access to resources
Recommend
Bicrystalline Grain Boundary Junctions of Co-doped and P-doped Ba-122 Thin Films
Journal of Physics: Conference Series , Vol. 507, Iss. 1, 2014-05 ,pp. :
Access to resources
Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4
Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. :
By Benhaliliba M. Benouis C. Aida M. Yakuphanoglu F. Sanchez Juarez A.
Journal of Sol-Gel Science and Technology, Vol. 55, Iss. 3, 2010-09 ,pp. :
XPS study of CVD silicon thin films deposited on various substrates from SiH
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :