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Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy

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Physics of the Solid State, Vol. 43, Iss. 1, 2001-01 ,pp. : 151-156

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Effects of substrate nitridation time on the thermal properties of GaN films grown on silicon by molecular beam epitaxy

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Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

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Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

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