Photoconduction in silicon rich oxide films

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.167, Iss.1, 2009-05, pp. : 79-83

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Single-layer graphene oxide films on a silicon surface

By Aleksenskii A.   Brunkov P.   Dideikin A.   Kirilenko D.   Kudashova Yu.   Sakseev D.   Sevryuk V.   Shestakov M.  

Technical Physics, Vol. 58, Iss. 11, 2013-11 ,pp. : 1614-1618

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Silicon passivated by insulating erbium oxide films

By Rodionov M.   Rozhkov V.  

Technical Physics Letters, Vol. 31, Iss. 2, 2005-02 ,pp. : 115-116

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structural study of thermal-oxide films on silicon by cathodoluminescence

By Zamoryanskaya M.   Sokolov V.  

Physics of the Solid State, Vol. 40, Iss. 11, 1998-11 ,pp. : 1797-1801

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Silicon passivated by two-layer insulating films of ytterbium oxide and dysprosium oxide

By Rodionov M.   Rozhkov V.   Pashin A.  

Technical Physics Letters, Vol. 30, Iss. 6, 2004-06 ,pp. : 512-514

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Multilayer silicon rich oxy-nitride films characterization by SIMS, VASE and AFM

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 1, 2008-03 ,pp. : 64-67

IOP Publishing

Access to resources Recommend Favorite