Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate- and time-domain study of defect state kinetics

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.214, Iss.1, 2010-03, pp. : 4-10

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Photocarrier radiometric study of defect states in semi-insulating GaAs

By  

Journal of Physics: Conference Series , Vol. 214, Iss. 1, 2010-03 ,pp. : 507-511

IOP Publishing

Access to resources Recommend Favorite

Non-steady-state photo-EMF in semi-insulating GaAs under frequency-modulated illumination

By Bryushinin M.   Kulikov V.   Sokolov I.   Delaye P.   Pauliat G.  

EPL (EUROPHYSICS LETTERS), Vol. 105, Iss. 6, 2014-03 ,pp. : 64003-64003

Edp Sciences

Access to resources Recommend Favorite

Nondestructive deep-level diagnostic method for semi-insulating materials

By Il’ichev É.  

Technical Physics, Vol. 43, Iss. 5, 1998-05 ,pp. : 611-613

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Recent developments in the study of the EL2 defect in GaAs

By  

Revue de Physique Appliquée (Paris), Vol. 23, Iss. 5, 1988-05 ,pp. : 726-726

Edp Sciences

Access to resources Recommend Favorite

On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers

By  

Journal de Physique III, Vol. 1, Iss. 9, 1991-09 ,pp. : 1481-1487

Edp Sciences

Access to resources Recommend Favorite