Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.190, Iss.1, 2009-11, pp. : 672-675

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

CVD-derived Hf-based High-k Gate Dielectrics

By He Gang   Deng Bin   Sun Zhaoqi   Chen Xiaoshuang   Liu Yanmei   Zhang Lide  

Critical Reviews in Solid State and Material Sciences, Vol. 38, Iss. 4, 2013-01 ,pp. : 235-261

Taylor & Francis Ltd

Access to resources Recommend Favorite

Local structures around Mn atoms in MnxSi1-x thin films probed by fluorescence XAFS

By  

Journal of Physics: Conference Series , Vol. 190, Iss. 1, 2009-11 ,pp. : 607-610

IOP Publishing

Access to resources Recommend Favorite

Synthesis and electrical characterization of a MOS memory containing Si nanoparticles embedded in high-k HfO2 thin film

By  

Journal of Physics: Conference Series , Vol. 152, Iss. 1, 2009-03 ,pp. : 163-167

IOP Publishing

Access to resources Recommend Favorite

Non-equilibrium dielectric response of high-K gate stacks in Si MOSFETS: application to SO interface phonon scattering

By  

Journal of Physics: Conference Series , Vol. 35, Iss. 1, 2006-04 ,pp. : 255-268

IOP Publishing

Access to resources Recommend Favorite

Characteristics of High- k ZrO 2 Gate Dielectrics on O 2 /N 2 O Plasma Treated Si 0.69 Ge 0.3 C 0.01 /Si Heterolayers

By Mahapatra R.   Maikap S.   Dhar A.   Mathur B.   Ray S.  

Ferroelectrics, Vol. 329, Iss. 1, 2005-01 ,pp. : 101-105

Taylor & Francis Ltd

Access to resources Recommend Favorite