The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

Publisher: IOP Publishing

ISSN: 1742-6596

Source: Journal of Physics: Conference Series , Vol.276, Iss.1, 2011-02, pp. : 1180-1187

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content