Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|8|88103-88106

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.8, 2015-01, pp. : 88103-88106

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