Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers

Publisher： IOP Publishing

ISSN： 1757-899X

Source： IOP Conference Series: Materials Science and Engineering, Vol.56, Iss.1, 2014-03, pp. : 27-31

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

By  

IOP Conference Series: Materials Science and Engineering, Vol. 56, Iss. 1, 2014-03 ,pp. : 21-26

IOP Publishing

Access to resources Recommend Favorite

Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC

By  

IOP Conference Series: Materials Science and Engineering, Vol. 56, Iss. 1, 2014-03 ,pp. : 16-20

IOP Publishing

Access to resources Recommend Favorite

Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers

By  

IOP Conference Series: Materials Science and Engineering, Vol. 56, Iss. 1, 2014-03 ,pp. : 32-35

IOP Publishing

Access to resources Recommend Favorite

Characterizing Defects Induced by Irradiation Damage in 6H-SiC

By  

Defect and Diffusion Forum, Vol. 2018, Iss. 382, 2018-02 ,pp. : 325-331

Trans Tech Publications

Access to resources Recommend Favorite

Formation Mechanisms of the Point Defects from the 4H-SiC (0001) Surface to the Interior Layers: First Principle Calculation

By  

Key Engineering Materials, Vol. 2016, Iss. 697, 2016-08 ,pp. : 771-776

Trans Tech Publications

Access to resources Recommend Favorite