Low temperature electron magnetotransport in InxGa1-xAs/In0.52Al0.48As quantum wells with high electron density

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.150, Iss.2, 2009-02, pp. : 375-378

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Ab initio based atomic scattering amplitudes and {002} electron structure factors of InxGa1−xAs/GaAs quantum wells

By  

Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 226-231

IOP Publishing

Access to resources Recommend Favorite

Ferromagnetism and magnetotransport in GaAs structures with InAs quantum dot layer or InxGa1-xAs quantum well delta-doped with Mn and C

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 103-106

IOP Publishing

Access to resources Recommend Favorite

Experimental evidence of exciton wavefunction shrinkage in InxGa1-xAs/InP multi quantum wells

By  

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-315-C5-318

Edp Sciences

Access to resources Recommend Favorite

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

By Vinokurov D.   Zorina S.   Kapitonov V.   Nikolaev D.   Stankevich A.   Shamakhov V.   Tarasov I.  

Technical Physics Letters, Vol. 32, Iss. 4, 2006-04 ,pp. : 299-301

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Investigation of strained InxGa1−x As/InP quantum wells fabricated by metalorganic compound hydride epitaxy

By Bondarev A.   Vinokurov D.   Kapitonov V.   Kovalenkov O.   Sokolova Z.   Tarasov I.  

Technical Physics Letters, Vol. 24, Iss. 11, 1998-11 ,pp. : 886-887

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite